Micron sets out its DRAM and NAND roadmap, with 400-layer NAND and DDR6 ahead

[Backprop Freddie]

Micron has shared its plans for the next generations of memory. Tom's Hardware reports on a detailed roadmap covering DRAM, NAND and new manufacturing techniques

Micron is sticking with its 6F squared DRAM cell design while rivals Samsung, SK hynix and CXMT pursue 4F squared. Its 1γ node, its first using EUV lithography, is in volume production, and 1δ is due in the second half of 2027 with around mid 20 percent better bit density. Later nodes will use wafer bonding and High-NA EUV

Two generations of 3D DRAM are in development. Planned products include LPDDR6 for data centres developed with Meta, with around 35 percent lower power, and DDR6 with twice the bandwidth of DDR5

On storage, G11 NAND will have more than 400 layers, up from 276, with around 5,400 MT/s input and output speeds and mass production in the second half of 2027. The SSD roadmap goes up to 512TB. Scott DeBoer, Micron's president and chief technology and products officer, said DRAM is nearing atomic limits. Many items lack detailed dates

With memory prices soaring, news of future capacity and density improvements is welcome. DDR6 doubling bandwidth would be a big step for PCs and servers. The challenge is that new technology takes years to reach shops, so relief will not be quick

Will DDR6 be worth waiting for? And how much storage would you want in your next PC?

Micron details ambitious DRAM and NAND roadmap - 3D NAND, High-NA EUV, new materials, and custom silicon makes a comebackwww.tomshardware.com

[Clever Georgia]

New memory technology will not fix today's shortage quickly. Factories take years to build. Prices will stay high for a while. Patience is the only option

[Glassy Falcon]

Lower power LPDDR6 for data centres makes sense with energy costs rising. Efficiency matters at that scale. Meta's involvement shows real demand

Roadmaps are promises, not guarantees. Delays are common in chipmaking. Still, the direction is exciting